Mitsubishi will release two new 4.5 kV/1,200 A XB Series high-voltage insulated-gate bipolar transistor (HVIGBT) modules on December 9, 2025.
The modules are available in:
Standard-isolation version rated at 6.0 kVrms
High-isolation version rated at 10.2 kVrms
Both variants incorporate IGBT chips with Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. New electric-field relaxation and surface-charge control structures reduce the chip termination region by approximately 30% and increase moisture resistance to approximately 20 times that of existing products.
Compared to the previous CM1200HC-90R module, the new XB Series modules provide:
Approximately 5% lower total switching loss (Eon + Eoff + Erec) at Tj=125°C, VCC=2,800 V, IC=1,200 A
Approximately 2.5 times higher reverse-recovery safe-operating area (RRSOA) tolerance measured by the product of VCE and Irr
The modules are designed for inverter systems in railcars and large industrial equipment operating in outdoor and variable environmental conditions.
Mitsubishi Electric will display the new modules at the 40th Nepcon Japan show in Tokyo from January 21–23, 2026, and at additional exhibitions in North America, Europe, China, and India.
