ROHM has introduced new Level 3 (L3) SPICE models, designed to improve simulation convergence and accelerate performance for its 4th Generation SiC MOSFETs. These models address the critical role of power semiconductor losses in system efficiency, where accurate simulations are essential during the design phase.
Unlike ROHM’s earlier Level 1 (L1) SPICE models, which accurately replicated device characteristics but faced issues with simulation convergence and extended computation times, the L3 models adopt a simplified approach. This maintains computational stability and accurate switching waveforms while cutting simulation time by approximately 50% compared to L1 models. The result is faster, high-accuracy transient analysis for entire circuits, facilitating efficient device evaluation and loss assessment in application design.
As of April 2025, ROHM has made 37 L3 models available for download in the Models & Tools section of each 4th Generation SiC MOSFET product page. The L1 models remain accessible alongside the new versions. A white paper is also provided to support model adoption.
Additional resources, including white papers, a design model support page, and SiC MOSFET technical documentation, are available. ROHM aims to further develop simulation technology to support the design of high-performance, efficient power conversion systems.
