Micron begins shipping 1γ-Based LPDDR5X memory for flagship Smartphones

Micron announced it is shipping qualification samples of its 1γ (1-gamma) node-based LPDDR5X memory, designed for flagship smartphones. The memory offers a speed grade of 10.7 gigabits per second (Gbps) and achieves up to 20% power savings compared to previous generations. It is packaged in a 0.61-millimeter form factor, which is 6% thinner than competing products and 14% thinner than Micron’s prior generation.
The 1γ-based LPDDR5X supports AI-driven mobile applications, delivering performance improvements such as 30% faster responses for location-based restaurant recommendations, over 50% faster translations for voice inquiries from English to Spanish text, and up to 25% faster responses for car purchase recommendations based on specific criteria, as evaluated using the Llama 2 large language model compared to 1β LPDDR5X’s 7.5 Gbps bandwidth.
Utilizing advanced EUV lithography and CMOS advancements, including next-generation high-K metal gate technology, the memory enhances bit density and transistor performance. The 1γ node is Micron’s most advanced memory node technology, first introduced in February for DDR5 memory in data center and client segments.
The memory addresses the growing demand for energy-efficient solutions as AI workloads shift to on-device processing in smartphones, tablets, and laptops. Its power efficienc...