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Discrete

GaNSlim from Navitas with integrated EMI control and loss-less current sensing

Navitas Semiconductor has announced GaNSlim, a new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. GANSLIM
GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with an ultra-low startup current below 10 µa, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup. Integrated features such as loss-less current sensing eliminate external current sensing resistors and optimize system efficiency and reliability. Over-temperature protection ensures system robustness and auto sleep-mode increases light and no-load efficiency. Autonomous turn-on/off slew rate control maximizes efficiency and power density while reducing external component count, system cost and EMI. GaNSlim features a patented, 4-pin, high-thermal-performance, low-profile, low-inductance, DPAK package. This package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs...
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