Littelfuse unveils low-side SiC MOSFET and IGBT gate driver IC
Littelfuse launched IX4352NE, a Low-side SiC MOSFET and IGBT Gate Driver IC specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications.
The key differentiator of the IX4352NE lies in its separate 9 A source and sink outputs, which enable tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator also provides a user-selectable negative gate drive bias for improved Dv/dt immunity and faster turn-off. With an operating voltage range (VDD - VSS) of up to 35 V, this driver offers exceptional flexibility and performance.
One of the standout features of the IX4352NE is its internal negative charge pump regulator, which eliminates the need for an external auxiliary power supply or DC/DC converter. This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic level translator circuitry. The logic input's compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities. The IX4352NE is ideally suited for driving SiC MOSFETs in various industrial applications such as: on-board and off-board chargers, Power Factor Correction (PFC), DC/DC converter...
One of the standout features of the IX4352NE is its internal negative charge pump regulator, which eliminates the need for an external auxiliary power supply or DC/DC converter. This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic level translator circuitry. The logic input's compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities. The IX4352NE is ideally suited for driving SiC MOSFETs in various industrial applications such as: on-board and off-board chargers, Power Factor Correction (PFC), DC/DC converter...
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