Powering high-voltage converters: Toshiba unveils ST3000GXH35A IEGT transistor
Date: 19/02/2024
Toshiba has introduced its latest innovation, the ST3000GXH35A Injection Enhanced Gate Transistor (IEGT), designed specifically for high-voltage converters. With impressive ratings of 4500 V/3000 A, this cutting-edge product promises enhanced performance and simplified circuitry for a wide range of applications.
Key Features:
Optimized N Buffer Layer Design: The ST3000GXH35A boasts an optimized N buffer layer design, resulting in a remarkable reduction of approximately 400 V in turn-off voltage oscillation peak-value (Vcp) at low current. This optimization significantly simplifies the snubber circuit, streamlining the overall design process.
Enhanced Short-Circuit Protection: Addressing the demands of modern applications requiring high voltage, the transistor offers an enhanced measuring voltage of 3400 V for short-circuit pulse-width. This enhancement facilitates the design of robust short-circuit protection mechanisms, ensuring reliable performance in diverse operating conditions.
Applications:
The versatility of the ST3000GXH35A makes it ideal for a range of high-voltage applications, including:
DC power transmission
Static VAR compensator
Industrial motor controller
Source: Toshiba
