Magnachip launches 6th Gen 600V SJ MOSFET based on microfab tech

Magnachip Semiconductor recently announced that the Company released its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology. This 6th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was developed using the 180nm microfabrication process and Magnachip's latest design technology. Magnachip said that the advanced technology used in this product has improved upon the previous generation of SJ MOSFETs by reducing the cell-pitches by 50% and lowering the RDS(on) by 42%. Despite these improvements, the MOSFET still comes in the same Decawatt Package (DPAK) and offers a low RDS(on) of 175mΩ and exceptional power density. The previous generation's total gate charge is effectively reduced by approximately 29%, leading to a decrease in switching loss and an improvement in power efficiency. This product's power efficiency is indeed a prominent attribute, granting product designers the freedom to adapt it to diverse applications. Moreover, the inclusion of a Zener diode between the gate and the source fortifies the MOSFET's durability and dependability in real-world scenarios, shielding it from potential harm caused by external surges or electrostatic discharges. Magnachip said that This new 600V SJ MOSFET offers exceptional efficiency, a versatile design, and unwavering reliability, making it an i...