8th-Gen 150V MXT MV MOSFETs from Magnachip with 22% less on-resistance
Date: 17/10/2023
The two new 150V MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) Magnachip Semiconductor made using 8th-gen trench MOSFET technology.
RDS(on) of new MDES15N056PTRH was reduced by 22% compared to the previous generation, thereby significantly enhancing energy efficiency in applications.
Magnachip said it also improved core cell and termination design and improved the Figure of Merit (FOM: RDS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH by 23% and 39%, respectively, compared to the previous version.
By packing these devices in surface-mount type packages, such as D2PAK-7L (TO-263-7L) and PDFN56, the MOSFET size is reduced.
These devices suggested for applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.
"Following the introduction of five 8th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages," said YJ Kim, CEO of Magnachip. "Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future."
Family of 8th-generation MXT MV MOSFETs:
