Diodes Incorporated has announced a family of automotive-compliant field-plated Super Barrier Rectifier (SBRFP) products, including the 2A SBRFP2M60P1Q and SBRFP2M60SAFQ, the 3A SBRFP3M60SAFQ, and the 8A SBRFP8A60P5Q. The devices are drop-in replacements for comparable Schottky and PN junction diodes and combine industry-leading ultra-low forward voltage (VF) with low reverse leakage current (IR). This makes them well suited to more efficient and reliable DC-DC converters, reverse-polarity protection, battery charging systems, automotive LED lighting, and transmission control systems.
Unlike conventional Schottky rectifiers, Diodes' proprietary, patented SBRFP technology is built on a metal oxide semiconductor (MOS) manufacturing process that overcomes the limitations of both Schottky and PN junction diodes. The SBRFP8A60P5Q offers the industry's lowest maximum forward voltage of 0.55 V at 8 A, which reduces conduction losses and allows cooler operation in high-current applications. The SBRFP2M60P1Q and SBRFP3M60SAFQ deliver industry-leading leakage performance, with maximum reverse currents of 12 µA and 7 µA respectively at 25 °C. These characteristics improve efficiency and lower the risk of thermal runaway at high operating temperatures.
The new rectifiers also provide significantly greater avalanche capability than traditional Schottky devices, with avalanche energy ratings of up to 145 mJ depending on the device. This lets them withstand surge events, load dumps, and transient conditions common in automotive electrical systems. Their avalanche capability is five to ten times greater than that of conventional Schottky rectifiers, improving overall system robustness and reliability.
The SBRFP family comes in several packages: PowerDI123 for the SBRFP2M60P1Q, PowerDI5 for the SBRFP8A60P5Q, and SMAF for the SBRFP2M60SAFQ and SBRFP3M60SAFQ. All devices operate stably across a junction temperature range of -55 °C to +175 °C, making them suitable for harsh automotive environments.
