Toshiba Electronic Devices & Storage Corporation has expanded its lineup with the launch of the IX800FXF2YMS4, a dual SiC MOSFET module for industrial equipment such as railway vehicles, renewable energy power generation systems, and power conversion systems. The module uses Toshiba's third-generation silicon carbide (SiC) MOSFET chips and is rated for a drain-source voltage of 3300 V and a drain current (DC) of 800 A. Its specifications also state an I²t limit value for the diode section, which indicates surge current capability.
Manufacturers of railway traction inverters and converters, renewable energy systems, and industrial motor control equipment face constant pressure to deliver higher efficiency, smaller size, and better reliability. In these systems, large surge currents can flow through power semiconductor modules under abnormal conditions, so sufficient surge current capability is essential. Thanks to an optimized SiC chip design, the IX800FXF2YMS4 achieves an I²t characteristic of 300 kA²s, reflecting the diode section's ability to withstand surges in such situations.
The module has a typical drain-source on-voltage (sense) of 1.4 V, which helps reduce conduction losses. Its typical turn-on switching loss (Eon) is 185 mJ and its typical turn-off switching loss (Eoff) is 175 mJ, both of which help limit switching losses. Together, these characteristics contribute to greater equipment reliability and efficiency, as well as smaller cooling systems.
The product adopts the iXPLV package, which offers excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of the bonded sections with the SiC chips, achieving the 175 °C channel temperature rating required for industrial equipment. With this addition, the number of SiC MOSFET modules in the iXPLV package rises to four, broadening the range of available options.
Toshiba plans to keep expanding its lineup of SiC MOSFET modules for industrial equipment, offering a wider choice of products to suit diverse equipment specifications and applications, and to contribute to more reliable, efficient, and compact industrial equipment.
Toshiba Launches 3300V SiC MOSFET Module with High Surge Current for Industrial Equipment Reliability
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