Advanced Semiconductor

Aratas America Introduces G3VH SiC MOSFET Relay for High-Voltage Applications

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Aratas America, formerly OMRON Electronic Components, has launched the G3VH, a high-load-voltage relay built using silicon carbide (SiC) MOSFET technology. The launch comes as demand grows for more efficient, high-voltage power semiconductor technology to support decarbonization and energy conservation efforts, with manufacturers increasingly turning to SiC-based solutions across applications ranging from renewable energy and data centers to industrial automation and transportation.

The G3VH is designed to support high-voltage switching applications requiring load voltages of either 1,800V or 3,300V. By using SiC MOSFET technology rather than traditional silicon, the relay offers stronger voltage withstand capability, low on-resistance (meaning less resistance when the relay is actively conducting), low leakage current, and reliable high-speed switching, all while minimizing power loss and heat generation. This combination is meant to let equipment manufacturers build smaller, more efficient high-voltage systems without sacrificing performance or reliability.

Compared to conventional silicon-based power semiconductors, SiC technology offers significantly higher dielectric breakdown strength, meaning it can withstand much higher voltages before fa...

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