Discrete

New power MOSFETs from ST gets closer to ideal switch

STMicroelectronics has extended its popular MDmesh M2 series of N-channel power MOSFETs with the introduction of a new family of devices that offer the industry’s highest power efficiencies in power supplies for servers, laptops, telecom, and consumer applications, especially under light-load conditions. With these new devices, designers can create switching power conversion solutions that are lighter and more compact, while more easily meeting increasingly stringent energy-efficiency targets. The new 600V MDmesh M2 EP devices combine ST’s proven strip layout with a new improved vertical structure and an optimized diffusion process to approach the ideal switch, with very low ON-resistance and the lowest available turn-off switching losses. They are tailored for very-high-frequency converters (f> 150 kHz), making them perfect for the most demanding PSU (Power Supply Unit) applications. Ideal for both hard- and soft-switching topologies, including resonant topologies such as LLC, the new devices offer extremely low switching losses, especially under light-load conditions. In addition to the very low gate charge (Qg) exhibited by all MDmesh M2 devices, the M2 EP devices feature up to a 20% reduction in Eoff (turn-off energy), thus reducing by the same percentage the turn-off switching losses in hard-switching converters. This Eoff reduction in the low current range boos...
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