Discrete

Super junction MOSFETs with 650V rating

Toshiba Corporation has launched the 4th generation of its system super junction MOSFETs, the "DTMOS β…£" series of 650V devices. The "TK14A65W" has been launched as the initial product in the series and full-scale mass production is scheduled to start in August, 2013. Using the latest single epitaxial process, the series reduces the RonΒ·A (on resistance per area) by approximately 50%[2] compared to existing 650V "DTMOS β…‘" series. This allows a line-up of small packages, contributing improved power efficiency and downsizing of products into which they are integrated. Main specifications: Part Number: TK14A65W Package: TO-220SIS RDS(ON): 0.25 ohms at VGS = 10V Qg (Typ): 35 nano Coulomb Ciss Typ.: 1300 pico Farads...
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