Super junction MOSFETs with 650V rating
Toshiba Corporation has launched the 4th generation of its system super junction MOSFETs, the "DTMOS β
£" series of 650V devices. The "TK14A65W" has been launched as the initial product in the series and full-scale mass production is scheduled to start in August, 2013.
Using the latest single epitaxial process, the series reduces the RonΒ·A (on resistance per area) by approximately 50%[2] compared to existing 650V "DTMOS β
‘" series. This allows a line-up of small packages, contributing improved power efficiency and downsizing of products into which they are integrated.
Main specifications:
Part Number: TK14A65W
Package: TO-220SIS
RDS(ON): 0.25 ohms at VGS = 10V
Qg (Typ): 35 nano Coulomb
Ciss Typ.: 1300 pico Farads...
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