New LDMOS power transistors in plastic package for TD-LTE

NXP Semiconductors N.V. has announced its new Gen8+ LDMOS RF power transistors for wireless base stations of more like TD-LTE. The first Gen8+ device to be introduced are the comparatively small sized BLC8G27LS-160AV for 15 W and 20 W power amplifiers for active antenna outdoor base stations (2.6 GHz), which can handle up to 5 TD-LTE carriers simultaneously efficiently over the full band (2.5 to 2.7 GHz).

The special feature of Gen8+ portfolio is the use of air cavity plastic (ACP) packages which is cheaper and flexible compared to ceramic packages. The new ACP packages also allow the use of improved passives, which enhance performance by reducing power consumption while increasing gain and efficiency, says NXP. Gen8+ complements a wide range of other package options, including QFN, OMP and ceramic.

“Optimized for wireless base stations supporting TD-LTE networks, the launch of Gen8+ coincides with the upcoming rollout of the world’s biggest 4G network in China. By providing the most comprehensive RF power portfolio of its kind, we are focused on enabling our customers to offer the best possible quality of service at the lowest cost,” said Christophe Cugge, director of marketing, base station power amplifiers, NXP Semiconductors. “Building on NXP’s strong heritage in RF power, Gen8+ LDMOS technology offers unprecedented performance, reduced power consumption and higher efficiency at a significantly lower cost – delivering a competitive edge which we plan to make available across all other base station applications in the near future.”

Availability: Engineering samples of Gen8+ ACP products are available immediately to qualified customers. Product samples of the BLC8G27LS-160AV and other Gen8+ LDMOS transistors will be available in Q3 2013.