Memory
Toshiba launches helium-sealed 24TB and 28TB HDDs
Toshiba announces the Mx11 family of helium-sealed high-capacity HDDs. The Mx11 family includes the MG11 Series, which provides capacities of up to 24TB using conventional magnetic recording (CMR), and the MA11 Series which offers up to 28TB capacities with shingled magnetic recording (SMR).
3 min read
Samsung starts mass production of its 1Tb QLC V-NAND
Samsung Electronics has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND). With the industry’s first mass production of QLC 9th-generation V-NAND,
3 min read
SK hynix developed industry’s first 16Gb DDR5 built using its 1c node
SK hynix developed the industry’s first 16Gb DDR5 built using its 1c node, the sixth generation of the 10nm process. The success marks the beginning of the extreme scaling to the level closer to 10nm in the memory process technology. The degree of difficulty to advance the shrinking process of th
3 min read
Everspin receive $14.55M award to improve its MRAM manufacturing
Everspin Technologies announced a strategic award to develop a long-term plan to provide manufacturing services for aerospace and defense segments. Under the award, Everspin will provide a plan to mitigate risks to its MRAM manufacturing supply chain. "Everspin is pleased to provide continuous on
1 min read
TrendForce finds global DRAM revenues grew by 24.8% in 2Q24
TrendForce reported that the DRAM industry saw a significant revenue increase to US$22.9 billion in the second quarter of 2024—a QoQ growth of 24.8%. This surge was driven by expanded shipments of mainstream products that boosted revenue for most manufacturers. Contract prices remained on an upward
5 min read
Toshiba launches 10TB S300 HDDs for the surveillance storage market
Toshiba has announced next-generation S300 Pro Surveillance Hard Disk Drives (HDDs) targeting the latest requirements in the surveillance storage market. With capacities up to 10TB and double the buffer size of their predecessors, the upgraded HDDs with conventional magnetic recording (CMR) technolo
3 min read
JEDEC revealed its upcoming DDR5 MRDIMM and LPDDR6 CAMM Standards details
JEDEC Solid State Technology Association announced its upcoming standards for advanced memory modules designed to power the next generation of high-performance computing and AI applications. JEDEC today revealed key details about its upcoming standards for DDR5 Multiplexed Rank Dual Inline Memory M
3 min read
SK hynix develops ZUFS1 4.0, a mobile NAND solution product for on-device AI
SK hynix has developed the Zoned UFS, or ZUFS1 4.0, a mobile NAND solution product for on-device AI applications. SK hynix said that the ZUFS 4.0, optimized for on-device AI from mobile devices such as smartp
3 min read
SK Hynix announces volume production of HBM3E DRAM for AI
SK Hynix has initiated volume production of HBM3E, the latest AI memory product known for its ultra-high performance, just seven months after the successful development of HBM3. This advancement marks SK Hynix as the first provider of HBM3E, further solidifying its position in the AI memory market.
2 min read
DRAM: 29.6% and NAND Flash: 24.5% QoQ growth in 4th Q 2023. reports TrendForce
TrendForce finds fourth quarter of 2023 witnessed substantial growth in both the DRAM and NAND Flash semiconductor market. Driven by heightened demand and strategic production adjustments by leading manufacturers, the outlook for the semiconductor market remains positive as we transition into 2024.
3 min read
Micron start volume producting of HBM3E to meet demand in AI server market
Micron Technology commenced volume production of its HBM3E (High Bandwidth Memory 3E) solution to address exponentially growing demand in AI server market. Partnering with NVIDIA, Micron's 24GB 8H HBM3E will power the upcoming NVIDIA H200 Tensor Core GPUs, ushering in a new era of artificial intelli
3 min read
Renesas annouces breakthrough circuit tech for embedded STT-MRAM MCUs
Renesas Electronics said it has developed cutting-edge circuit technologies for an embedded Spin-Transfer Torque Magnetoresistive Random-Access Memory (STT-MRAM) test chip, boasting fast read and write operations. These advancements, presented at the International Solid-State Circuits Conference 202
5 min read
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