SK Hynix announces volume production of HBM3E DRAM for AI

Date: 31/03/2024
SK Hynix has initiated volume production of HBM3E, the latest AI memory product known for its ultra-high performance, just seven months after the successful development of HBM3. This advancement marks SK Hynix as the first provider of HBM3E, further solidifying its position in the AI memory market. HBM3E is the fifth generation of High Bandwidth Memory, offering superior performance by vertically interconnecting multiple DRAM chips to enhance data processing speed.

SK Hynix's introduction of HBM3E positions it as a pioneer in providing high-performance DRAM chips, building on its success with HBM3 and establishing a strong presence in the AI memory sector. HBM3E processes up to 1.18TB of data per second, demonstrating exceptional speed capabilities. Additionally, it boasts a 10% improvement in heat dissipation performance through the application of advanced MR-MUF2 technology.

MR-MUF Technology: SK Hynix's MR-MUF (Mass Reflow Molded Underfill) process enhances heat dissipation efficiency by injecting protective materials between stacked semiconductor chips, reducing pressure on the chips and improving warpage control for stable mass production.