CVD Equipment Corporation Grows Single Crystal SiC Boules on PVT Systems with Stony Brook University

Semiconductor Equipment maker CVD Equipment announced the successful growth of single crystal silicon carbide (SiC) boules using its Physical Vapor Transport (PVT) Systems. The boules were characterized by Stony Brook University (SBU) as part of the new onsemi Research Center for Wide Bandgap Materials. Analysis at SBU determined the SiC boule has a 4H crystal structure, with no polytypes and low defect density.

Michael Dudley, Professor and Director of the onsemi Research Center for Wide Bandgap Materials at Stony Brook University, stated: “Using the PVT systems developed by CVDE to successfully grow silicon carbide single crystal boules under the auspices of the onsemi center is a natural evolution of the long-term collaboration between CVDE and SBU. The synergy of the expertise at CVDE in PVT systems and the prolific research background in silicon carbide and other wide bandgap materials at SBU will propel the next generation of crystal growth technologies for silicon carbide and other wide bandgap semiconductor materials.”

Manny Lakios, President and CEO of CVD Equipment Corporation, added: “We are pleased with our collaboration with Stony Brook University which enables the opportunity to demonstrate the performance of our Physical Vapor Transport equipment and our commitment to enabling the next generation of silicon carbide technology. W...