IGBT Market to Reach $13.4 Billion by 2030 Amid SiC Growth and Rising Chinese Supply Chain Share

Yole Group released two new reports on insulated-gate bipolar transistors (IGBTs): “IGBT 2025 – Market & Technology Trends” and “Si IGBT Comparison 2025.” The analyses combine market modeling with detailed reverse-engineering of 44 current-generation silicon IGBT devices from global manufacturers.

According to the reports, the total IGBT device market is projected to grow from its 2024 level to US$13.4 billion by 2030, representing a compound annual growth rate (CAGR) of 7.5% over the 2024–2030 period.

IGBT modules are forecast to expand faster, at an 8.6% CAGR during the same timeframe, while discrete IGBTs grow at only 1.9% CAGR. The faster module growth is attributed to increasing system-level integration in power electronics.

Despite accelerating adoption of silicon carbide (SiC) devices, particularly in 800 V electric-vehicle platforms and high-efficiency industrial systems, silicon IGBTs retain dominant positions in hybrid electric vehicles (HEVs), plug-in hybrids (PHEVs), photovoltaic inverters, wind turbines, uninterruptible power supplies (UPS), rail traction, and grid infrastructure applications.

Market momentum for IGBTs is supported by rising system voltages in renewable energy and charging infrastructure, o...