SK hynix Deploys High NA EUV System for Advanced AI Memory Production

SK hynix has introduced the industry’s first High Numerical Aperture (NA) Extreme Ultraviolet (EUV) lithography system, the TWINSCAN EXE:5200B, at its M16 fabrication plant in Icheon, South Korea, for mass production. The system, supplied by ASML, enables the printing of transistors 1.7 times smaller and achieves a transistor density 2.9 times higher than existing EUV systems, with a 40% increase in NA from 0.33 to 0.55.

The deployment supports the production of next-generation DRAM, addressing the semiconductor industry’s demand for advanced process technology to scale memory cells. This technology increases the number of chips produced per wafer and improves power efficiency and performance. SK hynix has utilized EUV since 2021 for its 1anm (fourth-generation 10nm) DRAM and aims to simplify processes and accelerate development with the new system to meet customer demand in AI and next-generation computing markets.

The initiative involves collaboration with ASML to enhance supply chain stability and advance memory product development. The system is expected to improve cost competitiveness and support SK hynix’s focus on high-value memory products.