Molybdenum-Based ALD Metallization: A Company Revolutionizing 2nm 3D Semiconductor Manufacturing

In the quest for advanced semiconductor integrated circuits (ICs), depositing atomically thin layers of dielectric and metal films in a three-dimensional (3D) structure has become critical. At deep nodes of 2nm and below, traditional metals like copper and tungsten are being surpassed by molybdenum, which offers superior performance and scalability for next-generation chips.
Semiconductors rely on fast electrical signals traveling through intricate connections, such as 3D NAND wordlines, to execute commands. Nanoscale features are etched into the chip, and when copper is unsuitable, tungsten has traditionally filled these gaps to form essential interconnects. Lower metal resistivity translates to faster signal speeds, enhancing chip performance. However, tungsten-based wiring often requires additional barrier layers to prevent unwanted electrical interactions, adding complexity. Molybdenum, with its lower resistivity and higher reliability compared to copper, eliminates the need for these barriers, streamlining processes and boosting efficiency. While already prevalent in 3D NAND, molybdenum is poised for rapid adoption in logic and DRAM applications.

LAM Research stands alone as the global leader in this transformative technology, ...