Mitsubishi Electric and Nexperia join to collaborate on the development of SiC power semiconductors

Mitsubishi Electric Corporation and Nexperia B.V. have formed a strategic alliance to collaborate on the development of silicon carbide (SiC) power semiconductors for the power electronics industry. Mitsubishi Electric will utilize its extensive knowledge in wide-bandgap semiconductor technology to manufacture SiC MOSFET chips, which will then be utilized by Nexperia in the creation of SiC discrete devices. The global expansion of the electric vehicle market is fueling the rapid growth of SiC power semiconductors. These semiconductors provide numerous advantages over traditional silicon power semiconductors, including lower energy loss, higher operating temperatures, and faster switching speeds. The exceptional efficiency of SiC power semiconductors is anticipated to play a crucial role in driving global decarbonization efforts and facilitating the transition towards a greener future. Mitsubishi Electric has achieved dominant positions in various sectors, including high-speed trains, high-voltage industrial applications, and household appliances. In 2010, the company introduced the world's inaugural SiC power modules for air conditioners, and in 2015, it became the first provider of an all-SiC power module for Shinkansen bullet trains. Mitsubishi Electric has amassed exceptional knowledge and proficiency in the design and production of SiC power modules, renowned for thei...