Mitsubishi Electric and Nexperia join to collaborate on the development of SiC power semiconductors

Date: 16/11/2023
Mitsubishi Electric Corporation and Nexperia B.V. have formed a strategic alliance to collaborate on the development of silicon carbide (SiC) power semiconductors for the power electronics industry. Mitsubishi Electric will utilize its extensive knowledge in wide-bandgap semiconductor technology to manufacture SiC MOSFET chips, which will then be utilized by Nexperia in the creation of SiC discrete devices.

The global expansion of the electric vehicle market is fueling the rapid growth of SiC power semiconductors. These semiconductors provide numerous advantages over traditional silicon power semiconductors, including lower energy loss, higher operating temperatures, and faster switching speeds. The exceptional efficiency of SiC power semiconductors is anticipated to play a crucial role in driving global decarbonization efforts and facilitating the transition towards a greener future.

Mitsubishi Electric has achieved dominant positions in various sectors, including high-speed trains, high-voltage industrial applications, and household appliances. In 2010, the company introduced the world's inaugural SiC power modules for air conditioners, and in 2015, it became the first provider of an all-SiC power module for Shinkansen bullet trains. Mitsubishi Electric has amassed exceptional knowledge and proficiency in the design and production of SiC power modules, renowned for their cutting-edge performance and unwavering dependability.

In the future, Mitsubishi Electric aims to enhance its collaboration with Nexperia, a renowned global leader in the field of designing, manufacturing, ensuring quality, and supplying a wide range of discrete devices. Nexperia's devices find applications in various sectors such as automotive, industrial, mobile, and consumer markets, playing a significant role in promoting decarbonization and fostering a sustainable future. Mitsubishi Electric remains committed to enhancing the performance and quality of its SiC chips while prioritizing the advancement of power modules through the utilization of its exclusive module technologies.

Mark Roeloffzen, SVP & General Manager Business Group Bipolar Discretes at Nexperia, said: "This mutually beneficial strategic partnership with Mitsubishi Electric represents a significant stride in Nexperia's silicon carbide journey. Mitsubishi Electric has a strong track record as a supplier of technically proven SiC device and modules. Combined with Nexperia's high-quality standards and expertise in discrete products and packaging, we will certainly generate positive synergies between both companies - ultimately enabling our customers to deliver highly energy efficient products in the industrial, automotive or consumer markets they serve."

Masayoshi Takemi, Executive Officer and Group President, Semiconductor & Device at Mitsubishi Electric, said: "Nexperia is a leading company in the industrial sector with proven technologies for high-quality discrete semiconductors. We are delighted to enter into this co-development partnership that will leverage the semiconductor technologies of both companies."

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Source: Mitsubishi