On Semiconductor equips to compete robustly in SiC semiconductor space

Today's cutting-edge power-electronics part of electric vehicle design is about packing/ storing highest energy density and safely managing that energy either for charging, running the traction motor or powering other electrical and electronic devices in the car. To achieve these, automotive electronic engineers replacing silicon power semiconductor devices with silicon Carbide and gallium nitride semiconductor devices to achieve high power efficiency, high energy density and higher speed of switching. These multiple benefits are irresistible, though these devices are expensive compared to pure silicon devices. To give you some idea on the market, the SiC total addressable market is projected to reach $ 6.5 billion in 2026 from $ 2 billion in 2021, growing at a CAGR of 33%. Mosy of the leading discrete semiconductor manufacturers have nearly switched to making compound semiconductor based power semiconductor devices. One of the leading discrete semiconductor vendor On Semiconductor has announced inaugration of its siliconcarbide (SiC) semiconductor manufacturing facility in Hudson, New Hampshire, US, with a ribbon cutting ceremony. This ceremony was attended by U.S. Secretary of Commerce Gina Raimondo. Also present were U.S. Senators Jeanne Shaheen and Maggie Hassan from New Hampshire, Representative Chris Pappas from the 1st congressional district of New Hampshire a...