Qorvo Achieves X-Band GaN Milestone in DARPA THREADS Program

Qorvo has announced that it achieved more than a 400% increase in RF power density at X-band on Gallium Nitride (GaN) transistors, through research and development funded by DARPA's Thermal Reduction for Electronics through Advanced Devices and Heterogeneous Semiconductors (THREADS) program. The announcement was made from Greensboro, North Carolina, on September 22, 2026. The accomplishment shows the potential to deliver substantially higher RF power for next-generation radar, electronic warfare (EW), and communications systems.

As transistor output power rises, excess heat in the channel can degrade RF performance, shorten device lifetime, and limit the range and effectiveness of RF systems. Under THREADS, which aims for a paradigm shift in thermal management, Qorvo is developing and integrating new materials, device architectures, and processes that reduce the total thermal resistance within the device, managing heat at the transistor level while significantly boosting RF performance.

Gangadhar Burra, senior director and chief architect in Qorvo's HPA business, said the result reflects the depth of the company's expertise in GaN device design and thermal management. By addressing heat at the transistor level, he explained, Qorvo is opening a path to substantially higher RF output power without increasing system size or weight, whi...