Navitas and Magnachip Partner to Expand High-Voltage Silicon Carbide Adoption

Navitas Semiconductor and Magnachip Semiconductor have announced a strategic partnership aimed at accelerating adoption of silicon carbide (SiC) technology in high-voltage and ultra-high-voltage power markets.

Under the agreement, Magnachip will license Navitas GeneSiC Trench-Assisted Planar technology, giving it entry into the high-voltage and ultra-high-voltage SiC market. The license covers Navitas' GeneSiC technology across 1200 V, 2300 V, 3300 V, and higher voltage ratings, letting Magnachip build its own next-generation power conversion products on top of Navitas' established SiC device platforms, silicon carbide being a semiconductor material that handles higher voltages and temperatures more efficiently than traditional silicon, making it well suited for demanding power applications.

Beyond the licensing itself, Magnachip will also get access to Navitas broader SiC supply chain and materials network, which is meant to help it enter the market faster. At the same time, the technology will be adapted, qualified, and brought in-house at Magnachip's own fabrication facility in South Korea. The companies expect this combination, using Navitas existing technology and materials base while building local manufacturing capability, to speed up Magnachip's move into SiC while maintaining continuity with Navitas proven platform. The licensed technology is expected ...