14nm FinFET expansion, 45nm RF SOI announced by Globalfoundries

The leading semiconductor foundry service provider Globalfoundries announced expansion of 14nm FinFET capacity by an additional 20 percent at its Fab 8 facility in New York with the new production capabilities to come online in the beginning of 2018. Globalfoundries said the development of 7nm and extreme ultraviolet (EUV) lithography is under progress with 7nm production planned for Q2 2018. Globalfoundries also plans to build 22nm FD-SOI capacity at is Fab 1 facility in Dresden to meet demand for the Internet of Things (IoT), smartphone processors, automotive electronics, and other battery-powered wirelessly connected applications, growing the overall fab capacity by 40 percent by 2020. Globalfoundries is developing 12FDX technology, with customer product tape-outs expected to begin in the middle of 2018. In the hot semiconductor market of China, Globalfoundries and the Chengdu municipality have formed a partnership to build a 300mm chip fab. The semiconductor wafer fabtwo begin production of mainstream process technologies in 2018 and also the commercially available 22FDX process technology, with volume production expected to start in 2019. Globalfoundries increased its 40nm Singapore's fab capacity at its 300mm fab by 35 percent, while also enabling more 180nm production on its 200mm manufacturing lines. The company will also add new capabilities to produce its ...