EUV semiconductor tech breakthrough by SEMATECH

Semiconductor technology research group SEMATECH claims new milestone of achievement in reducing tool-generated defects from the multi-layer deposition of mask blanks used for extreme ultraviolet (EUV) lithography, pushing the technology another significant step toward readiness for high-volume manufacturing (HVM). SEMATECH says its semiconductor research engineers have deposited EUV multilayers with zero defects per mask at 100 nm sensitivity (SiO2 equivalent). Eliminating these large “killer” defects is essential for the use of EUV in early product development and these results were achieved on a 40 bi-layer Si/Mo film stack and measured over the entire mask blank quality area of 132×132 mm2, according to SEMATECH. SEMATECH claims it has demonstrated that the multilayer deposition process itself can achieve zero defects down to 50 nm sensitivity. Coupled with novel improvements to the mask substrate cleaning process to remove incoming defects, this represents the capability to both extend EUV to future nodes by eliminating smaller “killer” defects, and as a step to reducing smaller defects (which can be mitigated) to a level where improved yield and mask cost make EUV a more cost-effective HVM technology, explains SEMATECH. “SEMATECH’s comprehensive programs continue to produce the results that our members and the industry need to show that EUV lithography is manufac...