Researchers could successfully integrate GeSn MOSFET on silicon

Semiconductor researchers are trying to use Germanium -based semiconductor material along with Silicon to increase the switching speed of MOSFETs and also to use optical link for intra-chip and inter chip communications. The Germanium Tin (GeSn) -based metal oxide semiconductor field effect transistor is explored as channel material to increase switching speed of MOSFET and also to support optical communications. Researchers are trying to come out with a process to deposit layer of germanium-Tin on silicon, which can be integrated into present chip making equipment. The challenges to grow a thin layer of GeSn on silicon includes limited solubility of Sn in Ge (0.5%), its compositional fluctuations, Sn segregation, and large lattice mismatch (>4%). The researchers of Belgium-based Imec, and Japan-based AIST could achieve a new solid phase epitaxial deposition process to integrate a Germanium-Tin (GeSn) metal-oxide semiconductor field-effect transistor (MOSFET) devices on Silicon. They claim to have demonstrated operation of depletion-mode junctionless GeSn pMOSFET on silicon, an important step toward achieving tensile strain in MOSFET devices, and increasing their mobility. The achievements claimed by researchers include: 1. Ultrathin (>10µm) single-crystalline GeSn layers on silicon substrates showing tensile strain, attractive for strain engineering of Ge channels....