SEMI honors high K metal gate team of Intel

SEMI today announced that team members at Intel Corporation — Mark Bohr, Robert Chau, Suman Datta, Mark Doczy, Brian Doyle, Tahir Ghani, Jack Kavalieros, Matthew Metz, and Kaizad Mistry — are recipients of the 2012 SEMI Award for North America. The Intel team was honored for their contribution to the first development, integration and introduction of a successful high-k dielectric and metal electrode gate stack for CMOS IC production, first implemented at the 45nm node in 2007. Dr. Robert Chau accepted the SEMI Award on behalf of his team during a banquet at the 2013 SEMI Industry Strategy Symposium (ISS) yesterday in Half Moon Bay, Calif. The successful introduction of a high-k/metal gate structure in commercial IC devices, aided by support from SEMI member companies with development of appropriate materials, processes and production tools, was a critically important milestone and continues to be in use throughout the IC industry for advanced planar and finFET-like CMOS transistors. Team members include: Mark Bohr, senior fellow and director of Process Architecture and Integration, Logic Technology Development, Intel Robert Chau, senior fellow and director of Transistor Research and Nanotechnology, Components Research, Intel Suman Datta, professor, Electrical Engineering, Pennsylvania State University* Mark Doczy, senior engineer in Advanced Transistor and Nanotechno...