Toshiba Electronic Devices & Storage Corporation has started shipping test samples of its new 1200V trench-gate SiC MOSFET, designated TW007D120E. The device is primarily designed for power supply systems in next-generation AI data centers and is also suitable for renewable energy equipment, including photovoltaic inverters, uninterruptible power supplies (UPS), EV charging stations, and energy storage systems.
The TW007D120E features Toshiba’s proprietary trench-gate structure, achieving an On-resistance per unit area (RDS(on)A) approximately 58% lower than the company’s 3rd-generation SiC MOSFET (TW015Z120C). The figure of merit, RDS(on) × Qgd, has been improved by approximately 52%. These characteristics are intended to reduce conduction and switching losses.
The MOSFET is housed in a QDPAK package that supports top-side cooling. It operates with a gate drive voltage of 15V to 18V and has a typical RDS(on) of 7.0 mΩ.
Toshiba plans to prepare for mass production of the TW007D120E during fiscal year 2026 and will continue expanding its SiC MOSFET lineup, including for automotive applications.
The development was supported by results from the NEDO-subsidized project JPNP21029.
