Applied Materials Launches Precision Selective Nitride PECVD and Trillium ALD Systems for 2nm and Below GAA Logic Chips

Applied Materials introduced two deposition systems on April 8, 2026, designed to create atomic-scale features in Gate-All-Around (GAA) transistors for advanced logic chips at 2nm process nodes and beyond. The systems address materials deposition challenges in 3D transistor structures amid growing demand for AI computing infrastructure.

The semiconductor industry is transitioning to GAA transistors at these nodes to achieve higher performance at equivalent power levels compared to prior architectures. This shift increases process complexity, with GAA transistor fabrication involving more than 500 steps, many requiring precise control of materials at tolerances approaching individual atoms. The new systems target deposition of metals and insulating dielectrics that influence transistor performance and power efficiency.

The Applied Producer Precision Selective Nitride PECVD system employs a selective bottom-up deposition process to place silicon nitride only in required areas of shallow trench isolation (STI) structures. STI electrically separates neighboring transistors by filling etched trenches with insulating material such as silicon oxide. In advanced GAA devices, these narrow trenches are among the smallest features, and subsequent processing steps can recess the oxide, affecting isolation quality.

The Precision Selective Nitride PECVD deposits a den...