Navitas Semiconductor and École Polytechnique Fédérale de Lausanne (EPFL) announced they will exhibit a 250 kW solid-state transformer (SST) solution at the Applied Power Electronics Conference (APEC) 2026, scheduled for March 22-26 in San Antonio, Texas.
The SST platform, developed by EPFL’s Power Electronics Laboratory under the HeatingBits project, supports grid architecture for next-generation data centers by replacing bulky low-frequency transformers and improving end-to-end efficiency. The design employs a single-stage, modularized bridge rectifier SST topology to convert 3.3 kV AC to 800 V DC at 250 kW power level, providing enhanced performance and modularity.
The system incorporates Navitas GeneSiC ultra-high voltage (UHV) 3300 V and high voltage (HV) 1200 V Silicon Carbide (SiC) Trench-Assisted Planar (TAP) MOSFETs and modules. The demonstrator is intended for deployment and testing within EPFL’s actual data center as part of the HeatingBits project.
Paul Wheeler, VP and GM of the SiC business unit at Navitas, stated that the combination of 3300 V and 1200 V GeneSiC MOSFETs with a single-stage SST architecture and advanced real-time control enables scalable 800 V DC distribution for higher grid-to-rack efficiency and heat reuse opportunities in AI data centers.
Drazen Dujic, Associate Professor and Director of the Power Electronics Laboratory at EPFL, said the platform offers a galvanically isolated, flexible, scalable, and efficient interface between medium-voltage AC grid and 800 V DC data center architecture, while serving as an experimental environment for advanced distributed control. He noted that Navitas’ UHV and HV SiC MOSFET portfolio allowed optimization for highest efficiency and design margins for robustness and reliability.
Representatives from Navitas and EPFL’s Power Electronics Laboratory will be available at Navitas booth #2027 during APEC.
