Lam' s dry photoresist qualified for direct-print 28nm pitch BEOL logic at 2nm

Lam Research announced that its innovative dry photoresist (dry resist) technology has been qualified for direct-print 28nm pitch back end of line (BEOL) logic at 2nm and below by imec, a leading research and innovation hub in nanoelectronics and digital technologies. An advanced patterning technique introduced by Lam, dry resist enhances the resolution, productivity and yield of extreme ultraviolet (EUV) lithography, a pivotal technology used in the production of next-generation semiconductor devices. Lam's dry resist technology provides unparalleled low-defect patterning in semiconductor device manufacturing. "Lam's dry photoresist technology provides unparalleled low-defectivity, high-resolution patterning," said Vahid Vahedi, chief technology and sustainability officer at Lam Research. "We are excited to offer this technology to imec and its partners as a critical process in the design and manufacturing of leading-edge semiconductor devices." As chipmakers move to advanced technology nodes, transistor features and pitch sizes continue to get smaller. Ambitious next-generation device roadmaps require direct-print 28nm pitch BEOL to enable scaling. Small pitch size can often result in poor pattern resolution, but Lam's dry resist technology helps optimize patterning by overcoming the well-known tradeoff between EUV exposure dose (cost) and defectivity (yield). At ime...