Qorvo launch Compact E1B packaged 1200V SiC Modules for Evs

Qorvo launched four new 1200V silicon carbide (SiC) modules, including two half-bridge and two full-bridge configurations, housed in a compact E1B package. Featuring RDS(on) starting at 9.4mΩ, these power semiconductor devices offer high efficiency and performance targeting applications such as electric vehicle (EV) charging stations, energy storage, industrial power supplies, and solar power systems. Qorvo's SiC modules feature a unique cascode configuration that minimizes RDS(on) and switching losses, enabling higher efficiency, especially in soft-switching applications. This technology allows for higher switching frequency operation, reducing solution size by utilizing smaller external components. Leveraging silver-sinter die attach technology, these SiC modules achieve reduced thermal resistance, as low as 0.23 °C/W. The stacked die construction, found in the "SC" part numbers, further improves power cycling performance by 2X compared to similar SiC power modules available in the market. Qorvo's SiC modules can replace multiple discrete SiC FETs, streamlining thermomechanical design and assembly. This allows customers to focus on the design, layout, and characterization of a single module, enhancing overall system reliability and efficiency. "The modules in this new family can replace as many as four discrete SiC FETs, thus simplifying thermomechanical design a...