Samsung and Arm collaborate in optimizing Cortex-X CPU for GAA process nodes

Samsung, the leading semiconductor foundry using Gate-All-Around (GAA) process technology in chips made in the nodes below 3nm is collaborating with Arm in delivering the next generation Arm Cortex-X CPU optimized on Samsung Foundry’s latest Gate-All-Around (GAA) process technology. It is continuation of their years of partnership, where millions of devices already shipped with Arm CPU intellectual property (IP) on various process nodes offered by Samsung Foundry. Now both are taking up the partnership to the next level of applications such as Generative AI. Samsung's GAA technology, showcased in the initial production of 3nm Multi-Bridge-Channel FET (MBCFET) enhances power efficiency by reducing supply voltage levels and boosts performance with higher drive current capability. The nanosheets structure employed in GAA implementation provides maximum design flexibility and scalability. Optimized Cortex-X CPU: Designed with Samsung’s next-generation GAA process node in mind, Arm has developed the optimized newest Cortex-X CPU, featuring additional performance and efficiency improvements. This collaboration aims to elevate the user experience by pushing the boundaries of computing capabilities. Design-Technology Co-Optimization (DTCO): Recognizing the importance of delivering products with competitive power, performance, and area (PPA) attributes, both Samsung and Arm hav...