Pre-matched discrete GaN-on-SiC HEMT serving as ISM CW amplifier

Gallium Semiconductor announced the availability of the GTH2e-2425300P ISM CW amplifier, a 2.4-2.5 GHz, 300W pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT). The GTH2e-2425300P brings a new level of efficiency for a wide range of Industrial, Scientific, and Medical (ISM) applications including semiconductor plasma sources and microwave plasma chemical vapour deposition (MPCVD) equipment for synthetic diamond production. Roger Williams, CEO of 3D RF Energy Corp, stated, “The GTH2e-2425300P sets a new standard for performance and ease-of-use in 2.45 GHz ISM solid-state power design. Its internal matching enables a straightforward PCB design, whether that be for a 400 W narrowband design with 76% efficiency or 300W design with 72-74% efficiency across the entire band. It is well-behaved in both class AB and class C, and its 17dB of gain at saturated power simplifies driver requirements.” Operating within the frequency range of 2.4 to 2.5 GHz and powered by a 50 V supply rail, the GTH2e-2425300P yields an efficiency rating that redefines benchmarks for RF power capabilities. With a peak efficiency of 76% (pulsed, 100 µs, 10% duty cycle), this HEMT embodies Gallium Semiconductor's dedication to improving RF performance. Measured data shows a drain efficiency of over 72% under continuous wave operation. A fixed tune demonstration board can be ordered by ...