STMicroelectronics start volume production of its STPOWER GaN transistors
STMicroelectronics announced it has started mass production of e-mode PowerGaN HEMT branded GaN transistors branded as STPOWER. These are for applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification.
The first devices SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT in a PowerFLAT 5×6 HV surface-mount package. SGT120R65AL is 15A current rated, RDS(on) of 75mΩ (milli-ohms) at 25 Deg C and gate charge of 3nC and SGT65R65AL is 25A current rated with RDS(on) of 49mΩ (milli-ohms) at 25°C and gate charge of 5.4nC and both feature low parasitic capacitances to achieve minimal turn-on/turn-off energy losses. A Kelvin source connection allows optimized gate driving. In addition to the reduced size and weight of the power supplies and adapters, the two new GaN transistors provide higher efficiency, lower operating temperature, and extended life time. ST to introduce new PowerGaN variants in coming months especially automotive-qualified devices with additional power-package options including PowerFLAT 8×8 DSC and LFPAK 12×12 for high power applications. "ST’s G-HEMT devices facilitate the transition to GaN wide-bandgap technology in power conversion. GaN transistors with the sa...
The first devices SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT in a PowerFLAT 5×6 HV surface-mount package. SGT120R65AL is 15A current rated, RDS(on) of 75mΩ (milli-ohms) at 25 Deg C and gate charge of 3nC and SGT65R65AL is 25A current rated with RDS(on) of 49mΩ (milli-ohms) at 25°C and gate charge of 5.4nC and both feature low parasitic capacitances to achieve minimal turn-on/turn-off energy losses. A Kelvin source connection allows optimized gate driving. In addition to the reduced size and weight of the power supplies and adapters, the two new GaN transistors provide higher efficiency, lower operating temperature, and extended life time. ST to introduce new PowerGaN variants in coming months especially automotive-qualified devices with additional power-package options including PowerFLAT 8×8 DSC and LFPAK 12×12 for high power applications. "ST’s G-HEMT devices facilitate the transition to GaN wide-bandgap technology in power conversion. GaN transistors with the sa...
You've read this far — sign in to keep reading