Toshiba launch two automotive N-channel power MOSFET for 48 V batteries
Toshiba has launched two automotive N-channel power MOSFET products that use the L-TOGL package to meet the growing demand for 48 V batteries in automotive equipment. They are 80 V “XPQR8308QB” and 100 V “XPQ1R00AQB.”
The products are required to have high reliability, high drain current ratings and high heat dissipation design for load switches and semiconductor relays used for inverters, battery management systems and junction boxes of light Evs and ISGs. By using Toshiba’s new U-MOS X-H process, the new products feature excellently low On-resistance. In addition, the L-TOGL package adopts a Cu clip structure that connects the MOSFET chip to outer leads with a thick Cu frame. This has reduced the package resistance by approximately 70 % and channel-to-case thermal impedance by 50 % compared with Toshiba’s existing package TO-220SM(W). Furthermore, this package uses gull wing leads which can reduce mounting stress, helping improve the reliability of solder joints for mounting devices on boards. These features enable low loss of equipment and high heat dissipation for large current flow. MOSFETs may be connected in parallel in applications that require large current. In such parallel connections, it is ideal that MOSFETs connected in parallel have small characteristics differences....
The products are required to have high reliability, high drain current ratings and high heat dissipation design for load switches and semiconductor relays used for inverters, battery management systems and junction boxes of light Evs and ISGs. By using Toshiba’s new U-MOS X-H process, the new products feature excellently low On-resistance. In addition, the L-TOGL package adopts a Cu clip structure that connects the MOSFET chip to outer leads with a thick Cu frame. This has reduced the package resistance by approximately 70 % and channel-to-case thermal impedance by 50 % compared with Toshiba’s existing package TO-220SM(W). Furthermore, this package uses gull wing leads which can reduce mounting stress, helping improve the reliability of solder joints for mounting devices on boards. These features enable low loss of equipment and high heat dissipation for large current flow. MOSFETs may be connected in parallel in applications that require large current. In such parallel connections, it is ideal that MOSFETs connected in parallel have small characteristics differences....
You've read this far — sign in to keep reading