AEC-Q101 qualified 1200 V, 100A and 40A SiC MOSFETs from Diodes
Diodes released automotive-compliant AEC-Q101 qualified Silicon Carbide (SiC) N-channel MOSFETs DMWSH120H90SM4Q and DMWSH120H28SM4Q automotive-compliant Silicon Carbide (SiC) MOSFETs for designing power electronics sys such as on-board chargers, automotive motor drivers, DC-DC converters in EV/HEV, and battery charging systems.
DMWSH120H90SM4Q operates up to 1200VDS with a gate-source voltage (Vgs) of +15/-4V and has an RDS(ON) of 75mΩ (milli ohms) (typical) at 15Vgs. This device is designed for on-board chargers, automotive motor drivers, DC-DC converters in EV/HEV, and battery charging systems. The DMWSH120H28SM4Q operates up to 1200VDS, +15/-4Vgs, and has a lower RDS(ON) of 20 mΩ (milli ohms) (typical) at 15Vgs. This MOSFET has been designed for motor drivers, EV traction inverters, and DC-DC converters in other EV/HEV subsystems. Low RDS(ON) enables these MOSFETs to run cooler in applications that require high power density. Both products have low thermal conductivity (RθJC=0.6°C/W), enabling drain currents up to 40A in the DMWSH120H90SM4Q and 100A in the DMWSH120H28SM4Q. They also have fast intrinsic and robust body diodes with low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q. This enables them to perform fast switching...
DMWSH120H90SM4Q operates up to 1200VDS with a gate-source voltage (Vgs) of +15/-4V and has an RDS(ON) of 75mΩ (milli ohms) (typical) at 15Vgs. This device is designed for on-board chargers, automotive motor drivers, DC-DC converters in EV/HEV, and battery charging systems. The DMWSH120H28SM4Q operates up to 1200VDS, +15/-4Vgs, and has a lower RDS(ON) of 20 mΩ (milli ohms) (typical) at 15Vgs. This MOSFET has been designed for motor drivers, EV traction inverters, and DC-DC converters in other EV/HEV subsystems. Low RDS(ON) enables these MOSFETs to run cooler in applications that require high power density. Both products have low thermal conductivity (RθJC=0.6°C/W), enabling drain currents up to 40A in the DMWSH120H90SM4Q and 100A in the DMWSH120H28SM4Q. They also have fast intrinsic and robust body diodes with low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q. This enables them to perform fast switching...
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