200 V, 10 m ohm's GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility.

Efficient Power Conversion (EPC) introduces the 200 V, 10 m ohm's EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives. EPC, the world's leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 m ohm's EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint. The EPC2307 is footprint compatible with the previously released 100 V, 1.8 m ohm's EPC2302, the 100 V 3.8 m ohm's EPC2306, the 150 V, 3 m ohm's EPC2305, the 150 V, 6 m ohm's EPC2308, and the 200 V, 5 m ohm's EPC2304 allowing designers to trade off RDS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint. The devices feature a thermally enhanced QFN package with exposed top. The extremely small thermal resistance improves heat dissipation through a heatsink or heat spreader for excellent thermal behavior, while wettable flanks simplify assembly, and footprint compatibility offers design flexibility to specs change for fast time to market. This family of devices bring several benefits to motor drive designs including very short deadtimes for high motor inverter + system efficiency, lower current ripple for...