pSemi Corporation has introduced the PE423213, a HaRP technology-enhanced reflective single-pole double-throw (SPDT) RF switch operating from 0.3 to 10.6 GHz for ISM, WLAN, Wi-Fi, Bluetooth and ultra-wideband (UWB) applications.
Built on pSemi’s UltraCMOS+ silicon-on-insulator (SOI) process, the switch has a typical supply current of 95 nA. Its 6-lead, 1.6 × 1.6 mm DFN package and operating-temperature range of −40°C to +105°C are intended for space-constrained, battery-powered and temperature-sensitive connected devices. The company says the device addresses the challenge of supporting more wireless standards and frequency bands while reducing power consumption and board space.
Key features of the PE423213 include typical insertion loss of 0.4 dB at 6 GHz, 0.5 dB at 8.5 GHz and 0.7 dB at 10.6 GHz; isolation of 28 dB, 25 dB and 18 dB at those respective frequencies; typical switching time of 100 ns; and an ESD rating of 2000V.
Xinliang “XL” Wang, senior director of product portfolio management at pSemi, said: “Designers are increasingly challenged to support more wireless standards and frequency bands while reducing power consumption and board space. The PE423213 combines broad frequency coverage, low insertion loss, high isolation, and fast switching with ultra-low current consumption in a compact UltraCMOS+ solution. We look forward to showcasing the device publicly for the first time at Electronica 2026 and discussing how it can simplify RF designs for secure access, tracking, smart-home automation, and industrial IoT applications.”
The PE423213 is supplied in a 6-lead 1.6 × 1.6 mm DFN package under order code PE423213A-Z; its evaluation kit has order code EK423213-01. pSemi will showcase the switch at Electronica 2026, November 10-13, 2026, at Messe München in Munich, Germany, in the Murata booth in Hall C4, Booth #179 (C4-179).
