Navitas Semiconductor announced that the first shipments of its 5th-generation GaNFast gallium nitride (GaN) technology, manufactured in the U.S. through a partnership with GlobalFoundries, will begin in September, marking a significant step in strengthening the domestic GaN supply chain for AI infrastructure and national security applications.
In November 2025, Navitas and GlobalFoundries announced a long-term strategic partnership aimed at accelerating U.S. based GaN innovation and manufacturing. As part of that agreement, Navitas developed its Gen 5 GaNFast FETs and power integrated circuits specifically for production at GlobalFoundries U.S. based 200mm GaN-on-silicon manufacturing facility in Burlington, Vermont.
This first shipment marks a key milestone in that collaboration, bringing Navitas next-generation GaNFast technology into a domestic U.S. production foundry for use in AI infrastructure, high-performance computing, industrial electrification, and critical national security applications.
Since 2014, Navitas has developed GaN power semiconductor technology, building industry leadership in GaNFast FETs and power ICs that integrate power delivery, drive circuitry, control, sensing, and protection functions into a single component. With more than 300 issued and pending patents across GaN and silicon carbide technology, the company has built substantial proprietary expertise in GaN process design kits (PDKs, the tools chipmakers use to design chips for a specific manufacturing process), device architectures, and integrated power technology.
Working closely with GlobalFoundries, Navitas applied that expertise to optimize its proprietary Gen 5 GaNFast technology and device designs for manufacturing on GlobalFoundries' advanced 200mm GaN-on-silicon production platform. Combined with GlobalFoundries decades of semiconductor manufacturing experience and high-volume production capacity, the partnership is intended to establish a trusted, U.S.-based supply of advanced GaN power semiconductors for AI infrastructure and other critical applications.
Chris Allexandre, president and CEO of Navitas, said this milestone demonstrates the strength of American innovation and manufacturing. He said that together with GlobalFoundries, Navitas has established a trusted domestic U.S. manufacturing source for its GaNFast Gen 5 technology and future generations, which he said will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the broader U.S. semiconductor ecosystem.
Kannan Soundarapandian, senior vice president of GlobalFoundries power business, said the first shipment from the companies U.S. manufacturing line demonstrates how GlobalFoundries and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply chain. He said combining Navitas' expertise in power semiconductors with GlobalFoundries' manufacturing capabilities enables the high-efficiency power solutions needed for AI infrastructure and other critical applications, while strengthening the resilience of the U.S. semiconductor supply chain.
The initial product lineup is expected to include 650V GaN FETs with on-resistance (RDS(ON)) values of 11 mΩ, 18 mΩ, 50 mΩ, 120 mΩ, and 150 mΩ. First wafers are scheduled to ship in September, with internal samples expected in October and samples for strategic customers before the end of the year.
