8.5 - 11.75 GHz GaAs MMIC power amplifier for 41dBm pulsed power

MACOM has unveiled its new X-band high power amplifiers for commercial radar and communication applications. The two-stage and three-stage MMIC Amplifiers offer a saturated pulsed output power of 41dBm and 40% power added efficiency. These MMIC amplifiers suggested as ideal for X-Band communication and radar applications. Both power amplifiers can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-Band applications, suggests MACOM. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41dBm, a large signal gain of 21dB and 40% power added efficiency. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-Band applications. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41dBm and a small signal gain of 36dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip provides 40% power added efficiency and offers very high gain which eliminates the need for a driver amplifier in customers' circuits. "The combination of high power, high gain and excellent power ...