Low on-resistance automotive power MOSFET from Toshiba

Toshiba Corporation has launched a low ON-resistance automotive power MOSFET devices in TO-220SIS package for use in automotive electronics systems. The new product, “TK80A04K3L” features low leakage current and operate up to a temperature of 175°C. This MOSFET can also be used in motor drives and switching regulators. These MOSFETS can be used to drive brushless DC motor from an MCU. Key Features 1. Low ON-resistance (VGS=10V) RDS(ON)=1.9 Milli Ohms(typ.) 2. Low leakage current IDSS=10µA(max) (VDS=rated voltage) 3. Tch = 175°C guaranteed 4. Lead-insertion type TO-220SIS package...