Memory

Samsung begin volume production of 8-Gb LPDDR4 Mobile DRAM
Samsung Electronics started volume production of 8 Gb low power double data rate 4 (LPDDR4) mobile DRAM using 20-nanometer (nm) process technology. LPDDR4 are used in latest smart phones and mobile devices for higher capacity, speed and low power. “By initiating production of the 20nm 8Gb LPDDR4
2 min read
FRAM chip integrated with binary counter save 94% energy
Fujitsu semiconductor has unveiled nonvolatile memory chip FRAM integrated with built-in binary counter. The idea of integrating binary counter function inside of FRAM memory chip is to save power and additional devices/resources. Fujitsu semiconductor says this device by incorporating multiple opti
2 min read
Automotive grade NOR flash memory withstand up to 125°C
Spansion has added automotive grade Serial NOR flash chips FL-S family with 128Mb and 256Mb densities with capability to operate in the temperature range of -40 Deg C to +125 Deg C. Spansion is leading player in this market and is offering serial Flash memories for automotive grade applications in
1 min read
Serial flash from Microchip with fast erase time of 35 ms
Microchip unveiled new 1.8V Serial Quad I/O (SQI) SuperFlash NOR flash memory chip SST26WF016B with 16-Mb capacity and is claimed by Microchip offering fastest erase times. In SST26WF016B sector and block erase commands are completed in 18 milli seconds and a full chip erase operation is comple
1 min read
Samsung starts production of 3-bit 3D V-NAND flash memory for SSDs
Vertically stacked semiconductor-wafers of flash-memory-cells is now the major trend in NAND flash memory. The three-dimensional vertical integration helps in achieving more memory per chip without going for difficult to achieve nodes such as 7nm for semiconductor memory fabrication. Many in the
2 min read
20nm 6Gb LPDDR3 Mobile DRAM chip from Samsung in mass production
Samsung started volume production of its 6 Gb low-power double data rate 3 (LPDDR3) mobile DRAM by using its 20 nanometer (nm) fab. Samsung said it's new 6Gb LPDDR3 offers data transfer rate of up to 2,133 megabits per second (Mbps) at each pin. A 3GB (gigabyte) LPDDR3 package can be created by
1 min read
Pin to pin compatible nonvolatile FRAM for your battery integrated SRAM
FRAM chips from Cypress semiconductors are made available in 44-pin TSOPII package option for its 1 Mb parallel asynchronous interface F-RAM with extended temperature range of -40˚C to +105˚C for its 2 Mb Serial Peripheral Interface (SPI) F-RAM. The advantage offered by Cypress' FRAM chips is t
2 min read
Adesto launches CBRAM tech NVRAM for medical systems
Adesto Technologies launches CBRAM tech RM24EP family of sterilization-tolerant, low energy non-volatile memory products targeting wearable and other energy-conscious medical devices. CBRAM withstands harsh temperature and irradiation conditions imposed by sterilization processes used in medical
2 min read
DRAM bit growth falls, as per study by IC Insights
IC Insights forecasts the average annual DRAM bit volume growth forecast to drop from 83% in the 1995-1999 time period to only 36% from 2010 through 2014. Below is the further analysis shared by the IC Insights: A worldwide economy mired in recession stunted DRAM bit volume growth to an all-ti
3 min read
2014 looks to be a good year for flash memory
Flash memory maker SanDisk reported second quarter 2014 revenue of $1.63 billion increased 11 percent on a year-over-year basis and increased 8 percent sequentially. "We are pleased to deliver record second quarter revenue in both enterprise and client SSDs, as well as retail products,” said San
1 min read
Monolithic 8Gb DDR3 SDRAM chip by Micron
A monolithic 8Gb DDR3 SDRAM chip is made available by Micron by using its 25nm memory chip process. Micron's DDR3 portfolio includes 8Gb single-die and dual-die components, 32GB RDIMMs (dual rank), 64GB LRDIMMs, 32GB ECC SODIMMs and 16GB VLP ECC UDIMMs. The top vendor of DRAM, Samsung had st
1 min read
1 Tera byte SSD using 3D NAND chips
The multistorey building-like vertically stacked semiconductor-wafers of flash-memory-cells inside a few square mm floor area is now the trend in NAND flash memory. The three-dimensional vertical integration helps in achieving more memory per chip without going for deeper nodes of semiconductor fabr
2 min read
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