Infineon's superjunction 500V MOSFETs for consumer and lighting applications

Infineon Technologies has introduced the 500V CoolMOS CE, a new series of CoolMOS MOSFET products.

Infineon says that the 500V CoolMOS CE combines all the benefits of modern superjunction MOSFETs such as low area specific on-state resistance, reduced switching losses and high body diode ruggedness.

"Leading performance, field proven reliability and consistent supply capability created customer confidence in high quality and continued innovation underlying CoolMOS technology," says Jan-Willem Reynaerts, product segment head of high voltage power conversion at Infineon Technologies. "The new 500V portfolio enables our customers to reach higher energy efficiency levels while at the same time offering a very attractive price-performance ratio, which makes this new set of CoolMOS CE devices an excellent alternative to standard MOSFETs in targeted applications."

CoolMOS CE uses superjunction technology and thus provides improved efficiency especially at light load conditions. The low area specific on-state resistance (RDS(on)) enables lower conduction losses, reduces energy stored in output capacitance (Eoss) and minimizes switching losses. High body diode ruggedness and reduced reverse recovery charge (Qrr) make it suitable for soft switching applications.

Availability and Price:

1. Samples of 500V CoolMOS CE in 280 mOhm and 500 mOhm Rds(on) in TO-220 package are available.
2. By May 2012, first samples of 500V devices in 280mOhm, 500mOhm and 950mOhm Rds(on) in DPAK and TO-220 fullpak packages will be available.
3. OEM ramp-ups are expected in May 2012.
4. Engineering sample is US $1.12 per piece (IPP50R280CE; 500V, 280mOhm in TO-220).