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STT and TEL collaborating on "SRAM and DRAM replacing MRAM"
Toshiba selects a bidder to sell its memory semiconductor biz
256 Kbit FRAM with SPI interface operates up to temp of 125°C
X-CEO of Sandisk is appointed as CEO and President of Micron
Silicon Motion extends BGA SSD solutions to support 3D NAND
Micron to focus on rugged storage for industrial IOT and smart fact...
Global Mobile DRAM revenue grew 20% in 4Q 2016, as per DRAMeXchange
UMC is a foundry partner for Panasonic in making Resistive RAM
Cypress electron-locking flash memory tech gets mass produced at UMC
China based Shannon launches first 12.8TB PCIe SSD
Micron completes acquisition of Inotera Memories
A new method by Fujitsu enables 2x response writing speed in flash ...
40nm Resistive RAM from 4DS on par with 3D Flash memory
DRAM contract prices forecasted to see another q-o-q 10% growth
JEDEC approves 2016 SPD enhancement for DDR4/DDR4E and LPDDR3/LPDDR4
Craving for memory, here is 256 GB MicroSD card from Samsung
IDT's DDR4 memory interface devices qualified for DIMMs on Intel Xeon
Three U.S. Patents related to memory storage granted to StorTrends
Samsung begins volume production before Toshiba sampling 256Gb 3-D ...
SanDisk and SK Hynix settle law-suit and expand business deals
256Gb 3-D NAND chip from Toshiba is available from September in sam...
1Mb no-battery serial SPI nvSRAM from Cypress and Anvo-Systems
AEC-Q100-qualified 2Mbit EEPROM for engine monitoring and safety ap...
Non-volatile memory tech breakthrough by Micron and Intel