Nova's Optical CD supports measure of vertical dimension in 3D semiconductor ICs

Nova Measuring Instruments Ltd. has introduced new Nova T600 Optical Critical Dimension (Optical CD) metrology system for process control of complex vertical structures for the 22nm technology node and beyond. Nova says during evaluations with leading memory and foundry customers significant improvements were demonstrated, including up to 4 times increase in measurement sensitivity on critical profile parameters of advanced 3D applications.

According to Nova for increasingly more complex 3D semiconductor structures, such as FinFET, Stacked NAND, and Buried-Gate DRAM, Optical CD is the only known method to non-destructively measure and control these vertical processes. The newly introduced Nova T600 is claimed by Nova as the first Optical CD system to feature oblique incidence spectroscopic reflectometry. Combined with a normal-incidence reflectometer, this multi-channel reflectometry configuration is optimized for best sensitivity on small features, including at the bottom of high-aspect-ratio structures.

Nova T600 metrology units fit into the full frame low vibration T-platform, designed with a Modular Metrology concept. T-platform can be configured to support multiple load ports and multiple measurement units - any combination of Nova T600 and Nova T500.

Eitan Oppenhaim, Executive Vice President of Global Business, said: "We see critical importance in bringing to the market at this time a system that enables production of 3D devices. This major transition of the industry after 50 years of planar transistors is truly a revolution, and the Nova T600 allows us to actively participate in this revolution. We are excited to introduce this latest metrology innovation from Nova, extending our product portfolio going forward in order to address the challenging demands of advanced nodes and complex structures below 22nm."