9Gb DDR3 SDRAM memory device packaged in a single PBGA

Microsemi Corporation has announced a 9Gb (gigabit) DDR3 SDRAM memory device packaged in a single plastic ball grid array (PBGA) and offered as a compact x72 dual in-line memory module (DIMM).

The solution enables designers to pack up to 4GB memory densities into smaller, faster systems used in mission-critical applications. These include secure communications, missile systems, munitions and other applications that operate in demanding environments and require extended-temperature ranges.

"Microsemi's DDR3 SDRAM packaging further strengthens our industry-leading offering of custom and standard high-reliability, extended-temperature memory solutions," said Jack Bogdanski, director of marketing for Microsemi. "We have more than three decades of experience in packaging techniques for military and aerospace applications. We will continue to focus on providing our customers with high-performance, high-reliability solutions that solve space and density issues."

Key Features
Density - 1GByte, 9Gbits. Upgradeable to 4GBytes
Measures only 20.5 mm x 21.5 mm
Available in a 375 PBGA package
Offers 30 percent space savings and 21 percent reduced I/O routing as compared to solutions with similar capabilities built from discrete components
Supports data rates of 800, 1,066 and 1,333 megabits per second (Mb/s)
Operates on a 1.5 volt power supply
Available in commercial and industrial temperature ranges

Microsemi's high-speed memories optimize performance by using a four nanosecond (ns)-prefetch architecture with an interface that allows two data words to be transmitted per clock cycle. The devices can be ruggedized and processed for tamper resistance, and are offered in densities up to 4GByte with 2x256Mx72 configurations. The company plans to offer a low-profile option that will be footprint-compatible with the current 375 PBGA package. All devices are subjected to extensive environmental and temperature testing.