California Eastern Laboratories (CEL) has unveiled two Small Signal GaAs FET NE3516S02 and NE3513M04 for designing X to Ku band low noise block (LNB) downconverters for direct broadcast satellites and also for designing X to Ku band wireless communications. CEL says these GaAs FETs offer improved Associated Gain and Noise Figure performance over previous generation devices.
Typical performance at 12GHz with bias 2V / 10mA:
NE3516S02: NF = 0.35dB, Ga = 14dB (typically used for 1st stage)
NE3513M04: NF = 0.45dB, Ga = 13dB (typically used for 2nd stage)
Both devices maintain impressive NF and Ga at the lower bias of 2V / 6mA, as follows:
NE3516S02: NF = 0.35dB, Ga = 13.5dB
NE3513M04: NF = 0.50dB, Ga = 12dB
Pricing, Packaging and Availability
Samples are available now at CEL. Pricing is as follows:
NE3516S02: $0.72 @ 100K pcs
NE3513M04: $0.52 @ 100K pcs
CEL has also introduced the NE555 family of RF Discrete LD MOSFETs which were specifically designed to meet the demanding requirements of 2-Way Radios. The NE555 series are also great medium power transistors for Automatic Metering Infrastructure, RFID readers, and general short range wireless applications.
RF output power options of 9W, 7W, and 2W at frequencies up to 1GHz, with nominal 7.5V supply.
High Power Added Efficiencies in the 52-60% range for 915MHz, and 63-73% range for 157MHz.
Built-in ESD protection, and high mismatch tolerance (ruggedness).
High thermal conductivity packaging.
CEL has evaluation boards optimized at 460MHz and 915MHz, and offers extensive design support.