Vishay Intertechnology has introduced new 8 V and 20 V n-channel and p-channel TrenchFET power MOSFETs with the industry’s lowest on-resistance in 1 mm by 1 mm by 0.55 mm and 1.6 mm by 1.6 mm by 0.6 mm CSP MICRO FOOT packages.
These devices are used for battery or load switching in power management applications for portable electronics such as smartphones, tablet PCs, and mobile computing devices, due to their package dimensions.
For applications where low on-resistance is more critical than space, the 8 V n-channel Si8424CDB and - 20 V p-channel Si8425DB offer maximum on-resistance of 20 milli ohms and 23 milli ohms, respectively, at a 4.5 V gate drive. The devices are offered in the 1.6 mm by 1.6 mm by 0.6 mm CSP package. With 43 milli ohms maximum on-resistance at 4.5 V, the smaller 1 mm by 1mm by 0.55 mm Si8466EDB 8 V n-channel MOSFET will be used for applications where space is even more critical than on-resistance. The Si8466EDB also provides 3000 V typical ESD protection.
The Si8466EDB and Si8424CDB offer on-resistance ratings down to 1.2 V, allowing the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry. All these devices are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition.
The Si8466EDB, Si8424CDB, and Si8425DB are the latest expansion to the MICRO FOOT family, which can be found at http://www.vishay.com/mosfets/micro-foot-package/.
Samples and production quantities of the new TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders.